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IXFN70N60Q2 の電気的特性と機能

IXFN70N60Q2のメーカーはIXYS Corporationです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN70N60Q2
部品説明 Power MOSFET ( Transistor )
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN70N60Q2 Datasheet, IXFN70N60Q2 PDF,ピン配置, 機能
HiPerFETTM Power
MOSFET Q2-Class
IXFN70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
T
L
VISOL
Md
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
50/60Hz, RMS
t = 1min
IISOL 1mA
t = 1s
Mounting Torque
Terminal Connection Torque
Weightwww.DataSheet4U.net
Maximum Ratings
600
600
±30
±40
70
280
70
5
V
V
V
V
A
A
A
J
20
890
-55 ... +150
150
-55 ... +150
300
V/ns
W
°C
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
600
3.0 5.5
±200
50
3
88
V
V
nA
μA
mA
mΩ
VDSS =
ID25 =
RDS(on)
trr
600V
70A
88mΩ
250ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z Double Metal Process for Low
Gate Resistance
z miniBLOC, with Aluminium Nitride
Isolation
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
Applications
z DC-DC Converters
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Pulse Generators
Advantages
z Easy to Mount
z Space Savings
z High Power Density
© 2009 IXYS Corporation, All Rights Reserved
DS99029D(06/09)

1 Page





IXFN70N60Q2 pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
70
60 VGS = 10V
7V
50 6V
40
30
20
5V
10
0
0 1234567
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
70
60 VGS = 10V
7V
50 6V
40
5V
30
20
10
0
0 2 4 6 8 10 12 14 16
VDS - Volts
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Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
1.0 TJ = 25ºC
0.8
0.6
0
20 40 60 80 100 120 140
I D - Amperes
© 2009 IXYS Corporation, All Rights Reserved
IXFN70N60Q2
Fig. 2. Extended Output Characteristics
@ 25ºC
140
120 VGS = 10V
100 7V
80
6V
60
40
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VDS - Volts
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.
Junction Temperature
3.0
2.6 VGS = 10V
2.2
I D= 70A
1.8
I D = 35A
1.4
1.0
0.6
0.2
-50 -25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case Temperature
80
70
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees Centigrade


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部品番号部品説明メーカ
IXFN70N60Q2

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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