|
|
PDF IXFN64N50PD2 Data sheet ( Hoja de datos )
| Número de pieza | IXFN64N50PD2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXFN64N50PD2 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
PolarHVTM HiPerFET
Power MOSFET
IXFN64N50PD2
IXFN64N50PD3
Boost & Buck Configurations
(Ultra-fast FRED Diode)
3
3
N-Channel Enhancement Mode
4
Avalanche Rated
2
Fast Intrinsic Diode
2
D2
1
D3 1
4
VDSS = 500V
ID25
RDS(on)
=
≤
50A
85mΩ
trr ≤ 200ns
miniBLOC, SOT-227 B
E153432
1
2
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤150°C
PD TC = 25°C
TJ
TJM
Tstg
Md Mounting Torque
Terminal Connection Torque
www.DataSheet4U.net
Weight
Maximum Ratings
500
500
± 30
± 40
50
200
64
2.5
V
V
V
V
A
A
A
J
10
625
-55 ... +150
150
-55 ... +150
1.5/13
1.3/11.5
30
V/ns
W
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
g
Symbol Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 500μA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
RDS(on)
VGS = 10V, ID = 32A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
± 200 nA
50 μA
1 mA
85 mΩ
4
3
D2 Pin Out:
1 = Source
2 = Gate
3 = Drain / Diode anode
4 = Diode cathode
D3 Pin Out:
1 = Source / Diode Cathode 2 = Gate
3 = Drain
4 = Diode cathode
Features
z Fast Intrinsic Diode in Boost
Configuration
z International Standard Package
z Encapsulating Epoxy Meets
UL 94 V-0, Flammability Classification
z miniBLOC with Aluminium Nitride
Isolation
z Avalanche Rated
z Low Package Inductance
Advantages
z Easy To Mount
z Space Savings
z Tightly Coupled FRED Diode
z High Power Density
Applications
z PFC Circuits
z Uninterruptible Power Supplies (UPS)
z Switched-Mode and Resonant-Mode
Power Supplies
z AC and DC Motor Drives
z High Speed Power Switching
Applications
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS99507F(4/09)
1 page  
Figs.13-19 FRED Diode Curves
IXFN64N50PD2
IXFN64N50PD3
70
A
60
IF 50
40 TVJ=150°C
30
TVJ=100°C
20
10
TVJ= 25°C
5
μC
Qr 4
3
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF= 15A
2
1
60
A
50
IRM
40
30
TVJ= 100°C
VR = 600V
IIFF==
60A
30A
IF=15A
20
10
0
0 1 2 3 V4
VF
Fig. 13. Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100
A/μs 1000
-diF/dt
Fig.
14. Reverse recovery
versus -diF/dt
charge
Qr
220
ns
200
trr
180
160
TVJ= 100°C
VR = 600V
IF= 60A
IF= 30A
IF=15A
140
0
0 200 400 600 A80/μ0s 1000
-diF/dt
Fig.
15. Peak reverse
versus -diF/dt
current
IRM
120
V
VFR
80
tfr
TVJ= 100°C
IF = 30A
VFR
1.2
μs
tfr
0.8
40 0.4
0.0
0
40 80 120 C 160
TVJ
Fig. 16. Dynamic parameters Qr, IRM
versus TVJ
www.DataSheet4U.net
2
1
K/W
ZthJC
0.1
0.01
120
0
200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 17. Recovery time trr versus -diF/dt
0 0.0
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 18. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.465
2 0.179
3 0.256
0.0052
0.0003
0.0397
0.001
0.00001
0.0001
0.001
0.01
Fig. 19 Transient thermal resistance junction to case
0.1 s
t
1
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_64N50P(9J)4-27-09
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXFN64N50PD2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXFN64N50PD2 | Power MOSFET ( Transistor ) | IXYS Corporation |
| IXFN64N50PD3 | Power MOSFET ( Transistor ) | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |