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PDF IXFN52N90P Data sheet ( Hoja de datos )
| Número de pieza | IXFN52N90P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN52N90P
VDSS = 900V
ID25 = 43A
≤RDS(on) 160mΩ
trr ≤ 300ns
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
PD
TJ
TJM
Tstg
TL
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md Mounting torque
www.DataSheet4U.net Terminal connection torque
t = 1min
t = 1s
Weight
Maximum Ratings
900
900
± 30
± 40
43
104
26
2
V
V
V
V
A
A
A
J
20
890
-55 ... +150
150
-55 ... +150
300
V/ns
W
°C
°C
°C
°C
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 26A, Note 1
Characteristic Values
Min. Typ. Max.
900 V
3.5 6.5 V
± 200 nA
50 μA
4 mA
160 mΩ
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
D
D = Drain
S
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z International standard package
z miniBLOC, with Aluminium nitride
isolation
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor drives
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS100065(10/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN52N90P.PDF ] | |
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