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PDF IXFN44N80P Data sheet ( Hoja de datos )
| Número de pieza | IXFN44N80P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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PolarHVTM HiPerFET IXFN 44N80P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on) ≤
trr ≤
800
39
190
250
V
A
mΩ
ns
Symbol
Test Conditions
VDSS
VDGR
VGS
V
GSM
I
D25
IDM
IAR
E
AR
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
= 25°C
TC = 25°C
dv/dt
P
D
TJ
TJM
T
stg
TL
VISOL
Md www.DataSheet4U.net
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 10 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
IISOL < 1 mA, 10 seconds
Mounting torque
Terminal torque
Weight
Maximum Ratings
800
800
± 30
± 40
39
100
22
80
3.4
V
V
V
V
A
A
A
mJ
J
10 V/ns
694
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
2500
3000
V~
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 800 μA
Characteristic Values
Min. Typ. Max.
800 V
VGS(th)
VDS = VGS, ID = 8 mA
3.0 5.0 V
I
GSS
V
GS
=
±
30
V,
V
DS
=
0
V
± 200 nA
IDSS
R
DS(on)
VDS = VDSS
VGS = 0 V
TJ = 125°C
V = 10 V, I = 0.5 I , Note 1
GS D TD25
50 μA
1.5 mA
190 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
D
D = Drain
S
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2006 IXYS All rights reserved
DS99503E(06/06)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN44N80P.PDF ] | |
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