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Número de pieza | IXFN39N90 | |
Descripción | HiPerFET Power MOSFETs Single MOSFET Die | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN39N90 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
V
ISOL
M
d
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Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC= 25°C
TC= 25°C, pulse width limited by TJM
TC= 25°C
TC= 25°C
TC= 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 39N90
D
G
V=
DSS
ID25 =
=RDS(on)
900 V
39 A
0.22 Ω
trr ≤ 250 ns
S
S
Maximum Ratings
900 V
900 V
±20 V
±30 V
39 A
154 A
39 A
64 mJ
4J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
700
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• FastintrinsicRectifier
Symbol
VDSS
BVDSS
VGH(th)
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
Temperature dependence
900
3.68
V
V/K
VDS = VGS, ID = 8 mA
Temperature dependence
2.5 5.0 V
-0.009
V/K
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
TJ = 25°C
TJ = 125°C
±200 nA
100 µA
2 mA
0.22 Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2001 IXYS All rights reserved
98628B (9/01)
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXFN39N90.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFN39N90 | HiPerFET Power MOSFETs Single MOSFET Die | IXYS Corporation |
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