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IXFN38N100P の電気的特性と機能

IXFN38N100PのメーカーはIXYS Corporationです、この部品の機能は「Polar Power MOSFET HiPerFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN38N100P
部品説明 Polar Power MOSFET HiPerFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN38N100P Datasheet, IXFN38N100P PDF,ピン配置, 機能
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN38N100P
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dV/dt
IS IDM, VDD VDSS, TJ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
VISOL
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Md Mounting Torque
www.DataSheet4U.net Terminal Connection Torque (M4)
Weight
Maximum Ratings
1000
1000
± 30
± 40
38
120
19
2
V
V
V
V
A
A
A
J
20
1000
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
30
V/ns
W
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5 6.5 V
± 300 nA
50 μA
4 mA
210 mΩ
VDSS =
ID25 =
RDS(on)
trr
1000V
38A
210mΩ
300ns
miniBLOC, SOT-227 B
E153432
S
G
G = Gate
S = Source
D
D = Drain
S
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z International Standard Package
z Encapsulating Epoxy meets
UL 94 V-0, Flammability Classification
z miniBLOC with Aluminium Nitride
Isolation
z Fast Recovery Diode
z Avalanche Rated
z Low package inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS99866B(7/09)

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IXFN38N100P pdf, ピン配列
IXFN38N100P
Fig. 1. Output Characteristics
@ 25ºC
40
VGS = 15V
35 11V
10V
30
25
9V
20
15
10 8V
5
7V
0
012345678
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
40
VGS = 15V
35 10V
30
9V
25
20
8V
15
10
7V
5
6V
0
0 2 4 6 8 10 12 14 16 18
VDS - Volts
www.DataSheet4U.net
Fig. 5. RDS(on) Normalized to ID = 19A Value vs. Drain
Current
2.6
2.4 VGS = 10V
15V - - - -
2.2
2.0 TJ = 125ºC
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0
10 20 30 40 50 60 70
ID - Amperes
80 90
100
90
80
70
60
50
40
30
20
10
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 15V
11V
10V
9V
8V
5 10 15 20 25 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 19A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2
1.8 I D = 38A
I D = 19A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75
TJ - Degrees Centigrade
100 125 150
40
35
30
25
20
15
10
5
0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_38N100P(99)7-14-09-D


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共有リンク

Link :


部品番号部品説明メーカ
IXFN38N100P

Polar Power MOSFET HiPerFET

IXYS Corporation
IXYS Corporation
IXFN38N100Q2

Power MOSFET ( Transistor )

IXYS Corporation
IXYS Corporation


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