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IXFN360N15T2 の電気的特性と機能

IXFN360N15T2のメーカーはIXYS Corporationです、この部品の機能は「GigaMOS TrenchT2 HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN360N15T2
部品説明 GigaMOS TrenchT2 HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN360N15T2 Datasheet, IXFN360N15T2 PDF,ピン配置, 機能
Advance Technical Information
GigaMOSTM TrenchT2
HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN360N15T2
VDSS =
ID25 =
RDS(on)
trr
150V
310A
4.0mΩ
150ns
miniBLOC, SOT-227
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
ID25
IL(RMS)
IDM
TC = 25°C (Chip Capability)
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS IDM, VDD VDSS, TJ 175°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
t = 1 minute
IISOL 1mA
t = 1 second
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Md Mounting Torque
Terminal Connection Torque
Weight
Maximum Ratings
150
150
V
V
±20 V
±30 V
310 A
200 A
900 A
100
TBD
A
J
20 V/ns
1070
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
150 V
2.5 5.0 V
±200 nA
50 μA
5 mA
4.0 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100180(08/09)

1 Page





IXFN360N15T2 pdf, ピン配列
Fig. 1. Output Characteristics
@ TJ = 25ºC
350
VGS = 15V
10V
300 8V
7V
250
200 6V
150
100
50 5V
0
0.0
350
300
250
200
150
0.2 0.4 0.6 0.8 1.0
VDS - Volts
Fig. 3. Output Characteristics
@ TJ = 150ºC
VGS = 10V
8V
7V
6V
5V
1.2
100
50 4V
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS - Volts
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Fig. 5. RDS(on) Normalized to ID = 180A Value vs.
Drain Current
3.4
VGS = 10V
3.0
3.0
2.6 TJ = 175ºC
2.2
1.8
1.4
TJ = 25ºC
1.0
0.6
0
50 100 150 200 250 300 350
ID - Amperes
IXFN360N15T2
Fig. 2. Extended Output Characteristics
@ TJ = 25ºC
350
VGS = 10V
300
7V
6V
250
200
150 5V
100
50
4V
0
0 1 2 3 4 5 6 7 8 9 10
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 180A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2
I D = 360A
1.8 I D = 180A
1.4
1.0
0.6
0.2
-50
-25
0
25 50 75 100 125 150 175
TJ - Degrees Centigrade
220
200
180
160
140
120
100
80
60
40
20
0
-50
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit
-25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
© 2009 IXYS CORPORATION, All Rights Reserved


3Pages


IXFN360N15T2 電子部品, 半導体
IXFN360N15T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximium Transient Thermal Impedance
0.200
.sadgsfgsf
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: F_360N15T2 (9V)08-19-09

6 Page



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部品番号部品説明メーカ
IXFN360N15T2

GigaMOS TrenchT2 HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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