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PDF IXFN32N120 Data sheet ( Hoja de datos )

Número de pieza IXFN32N120
Descripción HiPerFET Power MOSFETs
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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Advanced Technical Data
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
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Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ150°C, RG = 2
TC= 25°C
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 32N120
D
VDSS = 1200V
ID25 = 32A
=RDS(on) 0.35
G
SS
Maximum Ratings
1200
1200
V
V
±30 V
±40 V
32 A
128 A
32 A
64 mJ
4J
15 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
780
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
International standard package
miniBLOC, with Aluminium nitride
isolation
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell
structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS(th) = ±30 VDC, VDS = 0
VVGDSS
=
=
0VVDSS
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs,
duty cycle d 2 %
© 2003 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
TTJJ
=
=
25°C
125°C
V
5.0 V
±200 nA
50 µA
3 mA
0.35
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
DS98968B(10/03)

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