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PDF IXFN160N30T Data sheet ( Hoja de datos )
| Número de pieza | IXFN160N30T | |
| Descripción | GigaMOS Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
GigaMOSTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN160N30T
VDSS =
ID25 =
RDS(on) ≤
trr ≤
300V
130A
19mΩ
200ns
miniBLOC, SOT-227
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
t = 1 minute
t = 1 second
Md Mounting Torque
www.DataSheet4U.net Terminal Connection Torque
Weight
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
© 2009 IXYS CORPORATION, All Rights Reserved
Maximum Ratings
300
300
V
V
±20 V
±30 V
130 A
440 A
40 A
3J
20 V/ns
900 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Characteristic Values
Min. Typ. Max.
300 V
2.5 5.0 V
±200 nA
50 µA
3 mA
19 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Isolation voltage 2500 V~
z High Current Handling Capability
z Fast Intrinsic Diode
z Avalanche Rated
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100128(03/09)
1 page  
1.000
0.100
0.010
0.001
0.0001
IXFN160N30T
Fig. 13. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
10
Pulse Width - Seconds
www.DataSheet4U.net
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_160N30T (9E)03-23-09
5 Page | ||
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| PDF Descargar | [ Datasheet IXFN160N30T.PDF ] | |
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