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IXFN140N25T の電気的特性と機能

IXFN140N25TのメーカーはIXYS Corporationです、この部品の機能は「GigaMOS HiperFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFN140N25T
部品説明 GigaMOS HiperFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFN140N25T Datasheet, IXFN140N25T PDF,ピン配置, 機能
Advance Technical Information
GigaMOSTM HiperFETTM
Power MOSFET
IXFN140N25T
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS =
ID25 =
RDS(on)
trr
250V
120A
17mΩ
200ns
miniBLOC
E153432
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
ID25 TC = 25°C
IDM TC = 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
PD TC = 25°C
dv/dt
IS IDM, VDD VDSS, TJ 150°C
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS
IISOL 1mA
t = 1 minute
t = 1 second
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
M Mounting Torqued www.DataSheet4U.net
Terminal Connection Torque
Weight
Maximum Ratings
250
250
V
V
±20 V
±30 V
120 A
400 A
40 A
3J
690 W
20 V/ns
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
300
260
1.5/13
1.3/11.5
°C
°C
Nm/lb.in.
Nm/lb.in.
30 g
S
G
S
D
G = Gate D = Drain
S = Source
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z High Current Handling
Capability
z Fast Intrinsic Diode
z Low RDS(ON)
z Avalanche Rated
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
250 V
2.5 5.0 V
±200 nA
50 μA
3 mA
17 mΩ
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100268(05/10)

1 Page





IXFN140N25T pdf, ピン配列
IXFN140N25T
Fig. 1. Output Characteristics @ TJ = 25ºC
140
VGS = 10V
8V
120 7V
100
80 6V
60
40
20
5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
140
VGS = 10V
8V
120 7V
100 6V
80
60
40
5V
20
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS - Volts
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Fig. 5. RDS(on) Normalized to ID = 70A Value vs.
Drain Current
2.8
2.6 VGS = 10V
2.4
2.2
TJ = 125ºC
2.0
1.8
1.6
1.4
1.2
1.0 TJ = 25ºC
0.8
0
40 80 120 160 200 240 280
ID - Amperes
4.5
320
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
320
VGS = 10V
280 8V
7V
240
200
160
120
6V
80
40
5V
0
0 2 4 6 8 10 12 14 16 18
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 70A Value vs.
Junction Temperature
3.0
VGS = 10V
2.6
2.2
I D = 140A
1.8 I D = 70A
1.4
1.0
0.6
0.2
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
140
120
100
80
60
40
20
0
-50
-25
0 25 50 75
TC - Degrees Centigrade
100 125 150
© 2010 IXYS CORPORATION, All Rights Reserved


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部品番号部品説明メーカ
IXFN140N25T

GigaMOS HiperFET Power MOSFET

IXYS Corporation
IXYS Corporation


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