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PDF IXFN100N50P Data sheet ( Hoja de datos )

Número de pieza IXFN100N50P
Descripción PolarHV HiPerFET Power MOSFET
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFN100N50P Hoja de datos, Descripción, Manual

PolarHVTM HiPerFET IXFN 100N50P
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
VDSS = 500 V
ID25 = 90 A
RDS(on) 49 m
trr 200 ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDRMS
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOLwww.DataSheet4U.net
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 2
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
IISOL 1 mA
t=1s
Mounting torque
Terminal connection torque
SOT-227B
Maximum Ratings
500 V
500 V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
±30 V
±40 V
90 A
75 A
S
D
250 A
G = Gate
D = Drain
100 A S = Source
100 mJ Either Source terminal S can be used as the
5 J Source terminal or the Kelvin Source (gate
return) terminal.
20 V/ns
1040
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300
2500
3000
°C
V~
V~
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30 g
Features
International standard package
Encapsulating epoxy meets
UL 94 V-0, flammability classification
miniBLOC with Aluminium nitride
isolation
l Fast recovery diode
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
Advantages
l Easy to mount
l Space savings
l High power density
±200 nA
TJ = 125° C
25 µA
2000 µA
49 m
© 2006 IXYS All rights reserved
DS99497E(01/06)

1 page




IXFN100N50P pdf
IXFN 100N50P
1.000
0.100
0.010
0.001
0.0001
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.01
0.1
Pulse W idth - Seconds
1
10
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© 2006 IXYS All rights reserved

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