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PDF IXFL80N50Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFL80N50Q2 | |
| Descripción | HiPerFET Power MOSFET Q2-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFET
Q2-Class
(Electrically Isolated Tab)
IXFL80N50Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
FC
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
500
500
± 30
± 40
55
320
80
5
20
380
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lbs
VISOL
50/60 Hz, RMS
I ≤ 1 mAwww.DataSheet4U.net
ISOL
Weight
t = 1 min
t=1s
2500
3000
10
V~
V~
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30 V, VDS = 0V
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 40A, Note 1
500
3.0
V
5.5 V
± 200 nA
100 μA
5 mA
66 mΩ
VDSS =
ID25
RDS(on)
=
≤
trr ≤
500V
55A
66mΩ
250ns
ISOPLUS264TM( IXFL)
G
D
S
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Electrically isolated mounting tab
Double metal process for low gate
resistance
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generation
Laser drivers
Advantages
2500 V~ Electrical isolation
ISOPLUS 264TM package for clip or
spring mounting
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99360B(05/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFL80N50Q2.PDF ] | |
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