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PDF IXFL70N60Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFL70N60Q2 | |
| Descripción | HiPerFET Power MOSFET Q2-Class | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power
MOSFET Q2-Class
(Electrically Isolated Tab)
IXFL70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
VDSS =
ID25
RDS(on)
=
≤
trr ≤
600V
37A
92mΩ
250ns
ISOPLUS264
Symbol
Test Conditions
VVDDGSSR
TTJJ
= 25°C to 150°C
= 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
IIDDM25
TTCC
= 25°C
= 25°C, Pulse Width Limited by TJM
IA TC = 25°C
EAS TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
T
SOLD
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
FC Mounting Force
www.DataSheet4U.net
V 50/60 Hz, RMSISOL
IISOL ≤ 1 mA
t = 1 min
t=1s
Weight
Maximum Ratings
600 V
600 V
± 30 V
± 40 V
37 A
280 A
35 A
5J
20 V/ns
360 W
-55 ... +150
150
-55 ... +150
300
260
40..120 / 9..27
°C
°C
°C
°C
°C
N/lb.
2500
3000
V~
V~
8g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0 V, ID = 1mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±30 V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 35A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
± 200 nA
100 μA
5 mA
92 mΩ
G
D
S
G = Gate
S = Source
ISOLATED TAB
D = Drain
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 2500V Electrical Isolation
z Fast Intrinsic Diode
z Avalanche Rated
z Low QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switched-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z Temperature and Lighting Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS100068A(06/09)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFL70N60Q2.PDF ] | |
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