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PDF IXFL44N80 Data sheet ( Hoja de datos )
| Número de pieza | IXFL44N80 | |
| Descripción | HiPerFET Power MOSFETs ISOPLUS264 | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS264TM
(Electrically Isolated Backside)
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFL 44N80
VDSS = 800 V
ID25 = 44 A
RDS(on) = 0.165 Ω
Preliminary Data Sheet
Symbol
VVDDGSRS
VGS
VGSM
ID25
IIADRM
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TLwww.DataSheet4U.net
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
= 25°C, Note 1
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Maximum Ratings
800 V
800 V
±20 V
±30 V
44 A
176 A
44 A
64 mJ
4J
5 V/ns
550
-55 ... +150
150
-55 ... +150
300
2500
3000
5
W
°C
°C
°C
°C
V~
V~
g
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
800 V
2.0 4.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
0.165 Ω
ISOPLUS-264TM
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z FastintrinsicRectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99085(09/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFL44N80.PDF ] | |
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