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PDF IXFL39N90 Data sheet ( Hoja de datos )
| Número de pieza | IXFL39N90 | |
| Descripción | HiPerFET Power MOSFETs ISOPLUS264 | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs IXFL 39N90
ISOPLUS264TM
(Electrically Isolated Backside)
Single Die MOSFET
VDSS
ID25
RDS(on)
t
=
=
=
<
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings ISOPLUS-264TM
900 V
34 A
220 mΩ
ns
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Weight
www.DataSheet4U.net
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
900
900
±20
±30
34
154
39
64
4
5
580
-40 ... +150
150
-40 ... +150
2500
3000
8
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
g
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
z Fast intrinsic Rectifier
Applications
Symbol
VDSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 2, 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
900
2.5
TJ = 25°C
TJ = 125°C
V
5.0 V
±200 nA
100 µA
2 mA
220 mΩ
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99094(10/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFL39N90.PDF ] | |
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