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IXFL100N50P の電気的特性と機能

IXFL100N50PのメーカーはIXYS Corporationです、この部品の機能は「PolarHV HiPerFET Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFL100N50P
部品説明 PolarHV HiPerFET Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFL100N50P Datasheet, IXFL100N50P PDF,ピン配置, 機能
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS264TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL 100N50P
VDSS = 500 V
ID25 = 70 A
RDS(on) 52 m
trr 200 ns
Symbol
Test Conditions
Maximum Ratings ISOPLUS264
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
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VISOL
FC
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 2
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
500
500
±30
±40
70
250
100
100
5
20
625
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS
IISOL 1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
5
V
V
VG
D
VS
ISOLATEDTAB
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
N/lb
g
G = Gate
S = Source
D = Drain
Features
l International standard isolated
package
l UL recognized package
l Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic diode
Advantages
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 3 mA
VGS(th)
VDS = VGS, ID = 8 mA
IGSS VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT, Note 1
Characteristic Values
Min. Typ. Max.
500 V
l Easy to mount
l Space savings
l High power density
3.0 5.0 V
±200 nA
TJ = 125° C
25 µA
2000 µA
52 m
© 2006 IXYS All rights reserved
DS99563E(01/06)

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IXFL100N50P pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
100
VGS = 10V
90 8V
80
70
7V
60
50
40
30 6V
20
10
5V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
100
VGS = 10V
90 8V
7V
80
70
60
50
6V
40
30
20
5V
10
0
0 1 2 3 4 5 6 7 8 9 10 11
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VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 50A Value
vs. Drain Current
3
2.8 VGS = 10V
2.6
TJ = 125ºC
2.4
2.2
2
1.8
1.6
1.4 TJ = 25ºC
1.2
1
0.8
0 20 40 60 80 100 120 140 160 180 200 220
ID - Amperes
© 2006 IXYS All rights reserved
IXFL 100N50P
220
200
180
160
140
120
100
80
60
40
20
0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
9V
8V
7V
6V
2 4 6 8 10 12 14 16 18 20 22 24 26
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50A Value
v s. Junction Temperature
3.1
2.8 VGS = 10V
2.5
2.2
1.9 I D = 100A
1.6
I D = 50A
1.3
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
80
70
60
50
40
30
20
10
0
-50
Fig. 6. Maximum Drain Current v s.
Case Temperature
-25 0 25 50 75 100 125 150
TJ - Degrees Centigrade


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部品番号部品説明メーカ
IXFL100N50P

PolarHV HiPerFET Power MOSFET

IXYS Corporation
IXYS Corporation


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