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PDF IXFL30N120P Data sheet ( Hoja de datos )
| Número de pieza | IXFL30N120P | |
| Descripción | Polar HiPerFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL30N120P
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
PD TC = 25°C
TJ
TJM
Tstg
TL
TSOLD
Maximum lead temperature for soldering
Plastic body for 10s
VISOL
50/60 Hz, RMS, 1 minute
IISOL ≤ 1mA
www.DataSheet4U.net
FC Mounting force
t = 1s
Weight
Maximum Ratings
1200
1200
± 30
± 40
18
80
15
1.5
V
V
V
V
A
A
A
J
15
357
-55 ... +150
150
-55 ... +150
300
260
2500
3000
40..120/4.5..27
V/ns
W
°C
°C
°C
°C
°C
V~
V~
N/lb.
8g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 15A, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
3.5 6.5 V
± 200 nA
50 μA
5 mA
380 mΩ
VDSS =
ID25 =
≤RDS(on)
trr ≤
1200V
18A
380mΩ
300ns
ISOPLUS i5-PakTM (HV)
G
S
D
G = Gate
S = Source
D = Drain
Features
z UL recognized package
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power Applications
z High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
© 2008 IXYS CORPORATION, All rights reserved
DS99890A (04/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFL30N120P.PDF ] | |
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