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PDF IXFQ28N60P3 Data sheet ( Hoja de datos )
| Número de pieza | IXFQ28N60P3 | |
| Descripción | Polar3 HiperFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
Polar3TM HiperFETTM
Power MOSFETs
IXFQ28N60P3
IXFH28N60P3
VDSS =
ID25 =
RDS(on) ≤
600V
28A
260mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-3P (IXFQ)
Symbol
Test Conditions
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
TJ
TJM
Tstg
TL 1.6mm (0.062in.) from Case for 10s
Tsold Plastic Body for 10 seconds
Md Mounting Torque
Weight TO-3Pwww.DataSheet4U.net
TO-247
Maximum Ratings
600
600
V
V
± 30 V
± 40 V
28 A
70 A
14 A
500 mJ
35
695
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
5.5
6.0
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 2.5mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.0 V
±100 nA
25 μA
1.5 mA
260 mΩ
G
D
S
TO-247 ( IXFH)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low RDS(ON) and QG
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2011 IXYS CORPORATION, All Rights Reserved
DS100322(03/11)
1 page  
1
0.3
0.1
0.01
0.001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
IXFQ28N60P3
IXFH28N60P3
Fig. 13. Maximum Transient Thermal Impedance
AAAAA
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_28N60P3(K7)03-23-11
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