DataSheet.jp

8N80 の電気的特性と機能

8N80のメーカーはUnisonic Technologiesです、この部品の機能は「800V N-CHANNEL MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 8N80
部品説明 800V N-CHANNEL MOSFET
メーカ Unisonic Technologies
ロゴ Unisonic Technologies ロゴ 




このページの下部にプレビューと8N80ダウンロード(pdfファイル)リンクがあります。

Total 7 pages

No Preview Available !

8N80 Datasheet, 8N80 PDF,ピン配置, 機能
UNISONIC TECHNOLOGIES CO., LTD
8N80
8A, 800V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The UTC 8N80 is generally applied in high efficiency switch mode
power supplies.
FEATURES
* Typically 35 nC Low Gate Charge
* RDS(ON) = 1.45@VGS = 10V
* Typically 13 pF Low CRSS
* Improved dv/dt Capability
* Fast Switching Speed
* 100% Avalanche Tested
* RoHS–Compliant Product
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
8N80L-TA3-T
8N80G-TA3-T
8N80L-TF3-T
8N80G-TF3-T
8N80L-TF1-T
8N80G-TF1-T
8N80L-TF2-T
8N80G-TF2-T
Note: Pin Assignment: G: GND, D: Drain, S: Source
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-471.I

1 Page





8N80 pdf, ピン配列
8N80
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
IDSS
VDS=800V, VGS=0V
VDS=640V, TC=125°C
Gate- Source Leakage Current
IGSS VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4A
Forward Transconductance (Note 1)
gFS VDS=50V, ID=4A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V,
f=1.0MHz
SWITCHING PARAMETERS (Note 1, Note 2)
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=640V,
ID=8A
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=400V, ID=8A,
RG=25
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=8A, VGS=0V
Reverse Recovery Time (Note 1)
trr IS=8A, VGS=0V,
Reverse Recovery Charge (Note 1)
QRR dIF/dt=100A/µs
Note: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
800 V
0.5 V/°C
10
100
µA
±100 nA
3.0 5.0
1.18 1.45
5.6
V
S
1580 2050
135 175
13 17
pF
pF
pF
35 45
10
14
40 90
110 230
65 140
70 150
nC
nC
nC
ns
ns
ns
ns
8A
32
1.4
690
8.2
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
3 of 7
QW-R502-471.I


3Pages


8N80 電子部品, 半導体
8N80
TYPICAL CHARACTERISTICS
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
6 of 7
QW-R502-471.I

6 Page



ページ 合計 : 7 ページ
 
PDF
ダウンロード
[ 8N80 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
8N80

800V N-CHANNEL MOSFET

Unisonic Technologies
Unisonic Technologies
8N80C

FQP8N80C

Fairchild Semiconductor
Fairchild Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap