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Datasheet 22N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 22N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 22N60
HEXFET POWER MOSFET
DESCRIPTION
Power MOSFET
As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app |  Unisonic Technologies | mosfet |
22N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 22N055 | N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP22N055HHE, NP22N055IHE, NP22N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-st  Renesas mosfet | | |
| 2 | 22N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N10
·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.08Ω(Max) ·Fast Switching
·APPLICATIONS ·Switching regulators ·Switch  Inchange Semiconductor mosfet | | |
| 3 | 22N20 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
22N20
Preliminary
22A, 200V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a Unisonic Technologies mosfet | | |
| 4 | 22N50 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
22N50
·FEATURES ·Drain Current ID= 22A@ TC=25℃ ·Drain Source Voltage
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.25Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·A Inchange Semiconductor mosfet | | |
| 5 | 22N55 | IXFH22N55 HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avlanche Rated, High dv/dt, Low trr
IXFH 22N55
VDSS
ID (cont)
RDS(on) trr
= 550 V
= 22 A = 0.27 W £ 250 ns
Preliminary data
Symbol
VDSS VDGR VGS V
GSM
ID25 IDM IAR EAR dv/dt
P D
TJ TJM Tstg TL M
d
Weight
Symbol
V DSS
VGS(th) I
GSS
I
DSS
RDS(on  IXYS data | | |
| 6 | 22N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 22N60
HEXFET POWER MOSFET
DESCRIPTION
Power MOSFET
As the SMPS MOSFET, the UTC 22N60 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM app Unisonic Technologies mosfet | | |
| 7 | 22N65 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 22N65
Preliminary Power MOSFET
HEXFET POWER MOSFET
DESCRIPTION
As the SMPS MOSFET, the UTC 22N65 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch o Unisonic Technologies mosfet | |
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