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16N50のメーカーはUnisonic Technologiesです、この部品の機能は「N-CHANNEL POWER MOSFET」です。 |
部品番号 | 16N50 |
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部品説明 | N-CHANNEL POWER MOSFET | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューと16N50ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
UNISONIC TECHNOLOGIES CO., LTD
16N50
Preliminary
16 Amps, 500 Volts
N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 16N50 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology allows a minimum on-state
resistance and superior switching performance. It also can withstand
high energy pulse in the avalanche and commutation mode.
The UTC 16N50 is generally applied in high efficiency switch
mode power supplies, active power factor correction and electronic
lamp ballasts based on half bridge topology.
FEATURES
* 16A, 500V, RDS(ON)=0.38Ω @ VGS=10V
* High Switching Speed
* 100% Avalanche Tested
SYMBOL
2.Drain
1
TO-220F
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
16N50L-TF3-T
16N50G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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1 Page 16N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=8A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=400V, ID=16A
(Note 6, 7)
VDD=250V, ID=16A, RG=25Ω
(Note 6, 7)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=16A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR IS=16A, VGS=0V, dIF/dt=100A/µs
QRR (Note 6)
Notes: 6. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
7. Essentially independent of operating temperature
MIN TYP MAX UNIT
500 V
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.31 0.38 Ω
1495 1945 pF
235 310 pF
20 30 pF
32 45
8.5
14
40 90
150 310
65 140
80 170
nC
nC
nC
ns
ns
ns
ns
9.2 A
37 A
1.4 V
490 ns
5.0 µC
www.DataSheet4U.com
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-532.a
3Pages 16N50
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
www.DataSeohxtheceeetre4pUda,.creoavmmeentemrso)mlisetnetdariinlyp, rroadteudctsv
alues (such as maximum ratings, operating condition ranges, or
specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ 16N50 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
16N50 | N-CHANNEL POWER MOSFET | Unisonic Technologies |
16N50C | SIHF16N50C | Vishay Siliconix |
16N50C3 | SPP16N50C3 | Infineon Technologies |