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Datasheet 11N90 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 11N90 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
11N90
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.1Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·A |  Inchange Semiconductor | mosfet |
| 2 | 11N90 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N90
Preliminary Power MOSFET
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
1 TO-220
The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology s |  Unisonic Technologies | mosfet |
| 3 | 11N90C | FQA11N90C FQA11N90C 900V N-Channel MOSFET
September 2006
QFET
FQA11N90C
900V N-Channel MOSFET
Features
• • • • • • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23pF) Fast switching 100% avalanche tested Improved dv/dt capability |  Fairchild Semiconductor | data |
11N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 11N06LT | PHB11N06LT Philips Semiconductors
Product specification
TrenchMOS™ transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PH  NXP Semiconductors data | | |
| 2 | 11N120CN | HGTG11N120CN HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS
Data Sheet December 2001
43A, 1200V, NPT Series N-Channel IGBT
The HGTG11N120CN, HGTP11N120CN, and
www.datasheet4u.com HGT1S11N120CNS are Non-Punch Through (NPT) IGBT
Features
• 43A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall T Fairchild Semiconductor data | | |
| 3 | 11N40C | FQP11N40C FQP11N40C / FQPF11N40C — N-Channel QFET® MOSFET
FQP11N40C / FQPF11N40C
N-Channel QFET® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Features
• 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V, ID = 5.25 A
• Low Gate Charge (Typ. 28 nC) • Low Crss (Typ. 85 pF) • 100% Avalanche Test Fairchild Semiconductor data | | |
| 4 | 11N50 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 11N50
Preliminary Power MOSFET
500V N-CHANNEL MOSFET
DESCRIPTION
The UTC 11N50 is an N-channel enhancement mode Power FET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistance. It also Unisonic Technologies mosfet | | |
| 5 | 11N50E | PowerMOS transistors Philips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHB11N50E, PHW11N50E
SYMBOL
d
QUICK REFERENCE  Philips transistor | | |
| 6 | 11N50K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
11N50K-MT
Preliminary
11A, 500V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 11N50K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance, minimal on-state resistan Unisonic Technologies mosfet | | |
| 7 | 11N60C3 | SPP11N60C3 - CoolMOS Power Transistor SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) I  Infineon Technologies data | |
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