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DE275X2-501N16A の電気的特性と機能

DE275X2-501N16AのメーカーはIXYS Corporationです、この部品の機能は「RF Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 DE275X2-501N16A
部品説明 RF Power MOSFET
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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DE275X2-501N16A Datasheet, DE275X2-501N16A PDF,ピン配置, 機能
Directed Energy, Inc.
An IXYS Company
DE275X2-501N16A
RF Power MOSFET
Common Source Push-Pull Pair
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
a common source configuration. The device is optimized for push-pull or
parallel operation in RF generators and amplifiers at frequencies to >65
MHz.
Preliminary Data Sheet
VDSS
ID25
RDS(on)
PDHS
=
=
=
=
500 V
16 A
0.5
750 W
Unless noted, specifications are for each output device
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS (1)
PDAMB (1)
RthJHS (1)
TJ
TJM
Tstg
TL
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C, Derate 6.0W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
Maximum Ratings
500 V
500 V
±20 V
±30 V
DRAIN 1
DRAIN 2
16 A
96 A GATE 1
16 A
GATE 2
20 mJ
5 V/ns
SG1 SD1
SD2 SG2
>200
750
5.0
0.17
-55…+150
150
-55…+150
300
4
V/ns
W
W
K/W
°C
°C
°C
°C
g
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS = 0 V, ID = 3 ma
www.DataVShGeSe(tht4) U.com VDS = VGS, ID = 4 ma
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
500
2.5
V
5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
0.5
gfs VDS = 15 V, ID = 0.5ID25, pulse test 2 6
S
Advantages
High Performance Push-Pull RF
Package
Optimized for RF and high speed
switching at frequencies to >65MHz
Easy to mount—no insulators needed
High power density
Note: All specifications are per each tran-
sistor, unless otherwise noted.
(1) Thermal specifications are for the
package, not per transistor

1 Page





DE275X2-501N16A pdf, ピン配列
Directed Energy, Inc.
An IXYS Company
DE275X2-501N16A
RF Power MOSFET
501N16A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the
device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer ca-
pacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
10 DRAIN
20 GATE
Lg Doff
Roff D1crs
56
Ron
Don 7
4
D2crs
8
2
Ld
Rd
M3
Ls
Dcos
Rds
30 SOURCE
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
SYM=POWMOSN
.SUBCKT 501N16A 10 20 30
* TERMINALS: D G S
* 500 Volt 16 Amp .5 ohm N-Channel Power MOSFET
* REVA 6-15-00
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 .2
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.0N
RD 4 1 .5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
www.DataSLhGeet42U0.c5om1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8)
.MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M)
.MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M)
.ENDS
Doc #9200-0245 Rev 1
© 2001 Directed Energy, Inc.
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Web: http://www.directedenergy.com


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部品番号部品説明メーカ
DE275X2-501N16A

RF Power MOSFET

IXYS Corporation
IXYS Corporation


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