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IRG7S319UPBF PDF Data sheet ( 特性 )

部品番号 IRG7S319UPBF
部品説明 PDP TRENCH IGBT
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



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IRG7S319UPBF Datasheet, IRG7S319UPBF PDF,ピン配置, 機能
PD - 97155
IRG7S319UPbF
PDP TRENCH IGBT
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.26
170
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG7S319UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
www.DTahtaeSrhmeeat4lUR.ceomsistance
Parameter
dRθJC Junction-to-Case
Max.
±30
45
20
170
96
38
0.77
-40 to + 150
300
Typ.
–––
Max.
1.3
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
10/2/09

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