DataSheet.jp

IRG7PH46UD-EP PDF Data sheet ( 特性 )

部品番号 IRG7PH46UD-EP
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 



Total 11 pages
		

No Preview Available !

IRG7PH46UD-EP Datasheet, IRG7PH46UD-EP PDF,ピン配置, 機能
PD - 97498
IRG7PH46UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
IRG7PH46UD-EP
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
C VCES = 1200V
• Square RBSOA
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
G
I NOMINAL = 40A
TJ(max) = 150°C
• Tight parameter distribution
• Lead-Free
Benefits
E
n-channel
VCE(on) typ. = 1.7V
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
C
C
• Excellent current sharing in parallel operation
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
GC E
TO-247AC
IRG7PH46UDPbF
GC E
TO-247AD
IRG7PH46UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current (Silicon Limited)
IC @ TC = 100°C
Continuous Collector Current (Silicon Limited)
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE = 15V
cILM Clamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.comSoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
108
57
40
120
160
108
57
160
±30
390
156
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.32
0.66
–––
–––
Units
°C/W
www.irf.com
04/26/2010

1 Page





ページ 合計 : 11 ページ
PDF
ダウンロード
[ IRG7PH46UD-EP.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IRG7PH46UD-EP

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier

www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap