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Datasheet IRG7PH46U-EP Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IRG7PH46U-EP | INSULATED GATE BIPOLAR TRANSISTOR PD - 96305
INSULATED GATE BIPOLAR TRANSISTOR Features
• • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution L |  International Rectifier | transistor |
IRG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IRG41BC10UDPBF | Insulated Gate Bipolar Transistor PD - 95603
IRG4IBC10UDPbF
• Lead-Free
www.irf.com
1
7/28/04
IRG4IBC10UDPbF
2
www.irf.com
IRG4IBC10UDPbF
www.irf.com
3
IRG4IBC10UDPbF
4
www.irf.com
IRG4IBC10UDPbF
www.irf.com
5
IRG4IBC10UDPbF
6
www.irf.com
IRG4IBC10UD International Rectifier transistor | | |
| 2 | IRG41BC30UD | Ultra Fast CoPack IGBT PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-p International Rectifier igbt | | |
| 3 | IRG4BC10K | Short Circuit Rated UltraFast IGBT
PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 International Rectifier igbt | | |
| 4 | IRG4BC10KD | INSULATED GATE BIPOLAR TRANSISTOR
PD -91734B
IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • International Rectifier transistor | | |
| 5 | IRG4BC10KDPBF | HEXFET Power MOSFET PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
C
Short Circuit Rated UltraFast IGBT
VCES = 600V
• High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losse International Rectifier mosfet | | |
| 6 | IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR
PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications � International Rectifier transistor | | |
| 7 | IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vc International Rectifier transistor | |
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