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IRG7PH42UD1PbF の電気的特性と機能

IRG7PH42UD1PbFのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG7PH42UD1PbF
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG7PH42UD1PbF Datasheet, IRG7PH42UD1PbF PDF,ピン配置, 機能
PD - 97480
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• Ultra-low VF Diode
• 1300Vpk repetitive transient capacity
• 100% of the parts tested for ILM 
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead free package
C
G
E
n-channel
IRG7PH42UD1PbF
IRG7PH42UD1-EP
VCES = 1200V
I NOMINAL = 30A
TJ(max) = 150°C
VCE(on) typ. = 1.7V
Benefits
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
ICM
ILM
Nominal Current
hPulse Collector Current, VGE=15V
cClamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFRM
Diode Continous Forward Current
dDiode Repetitive Peak Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.comSoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GC E
TO-247AC
IRG7PH42UD1PbF
GC E
TO-247AD
IRG7PH42UD1-EP
G
Gate
C
Collector
E
Emitter
Max.
1200
85g
45
30
90
120
70
35
120
±30
313
125
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.4
1.05
–––
–––
Units
°C/W
www.irf.com
3/26/10

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IRG7PH42UD1PbF pdf, ピン配列
IRG7PH42UD1PbF/IRG7PH42UD1-EP
100
LIMITED BY PACKAGE
80
350
300
250
60 200
40 150
100
20
50
0
25
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
1.0
IC = 1.0mA
0.9
0
25 50 75 100 125 150
TC (°C)
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
100
0.8
0.7
10
0.6
0.5
25 50 75 100 125 150
TJ , Temperature (°C)
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
120
100
VGE = 18V
VGE = 15V
80
VGE = 12V
VGE = 10V
60 VGE = 8.0V
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20
0
0 2 4 6 8 10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
www.irf.com
1
10
100 1000
VCE (V)
10000
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
120
VGE = 18V
100 VGE = 15V
VGE = 12V
80 VGE = 10V
VGE = 8.0V
60
40
20
0
0 2 4 6 8 10
V CE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
3


3Pages


IRG7PH42UD1PbF 電子部品, 半導体
IRG7PH42UD1PbF/IRG7PH42UD1-EP
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.1306
0.1752
τi (sec)
0.000313
0.002056
τ4τ4 0.0814 0.008349
0.0031 0.0431
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.1 0.10
0.05
0.01
0.02
0.01
0.001
1E-006
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.01186
0.39298
τi (sec)
0.00001
0.000547
τ4τ4 0.43450 0.003563
CiC= iτi/Ri/iRi
0.22096 0.021596
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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6 www.irf.com

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部品番号部品説明メーカ
IRG7PH42UD1PbF

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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