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IRG7PH42U-EP の電気的特性と機能

IRG7PH42U-EPのメーカーはInternational Rectifierです、この部品の機能は「INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRG7PH42U-EP
部品説明 INSULATED GATE BIPOLAR TRANSISTOR
メーカ International Rectifier
ロゴ International Rectifier ロゴ 




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IRG7PH42U-EP Datasheet, IRG7PH42U-EP PDF,ピン配置, 機能
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
C
G
E
n-channel
PD - 96233B
IRG7PH42UPbF
IRG7PH42U-EP
VCES = 1200V
IC = 60A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
CC
GC E
TO-247AC
IRG7PH42UPbF
GC E
TO-247AD
IRG7PH42U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC
fThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
90g
60
30
90
120
±30
385
192
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.39
–––
–––
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
03/27/12

1 Page





IRG7PH42U-EP pdf, ピン配列
IRG7PH42UPbF/IRG7PH42U-EP
60
For both:
50
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
40 Power Dissipation = 95W
30
Square wave:
60% of rated
20 voltage
I
10 Ideal diodes
0
0.1
100
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
400
100
350
80
300
60 250
200
40 150
100
20
50
0
25 50 75 100 125 150 175
Fig. 2 - Maximum DC CToCll(e°cCt)or Current vs.
Case Temperature
1000
0
0 20 40 60 80 100 120 140 160 180
TC (°C)
Fig. 3 - Power Dissipation vs. Case
Temperature
1000
100
10μsec
100μsec
10
1msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10 100 1000 10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
www.irf.com
100
10
1
10
100 1000
VCE (V)
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
10000
3


3Pages


IRG7PH42U-EP 電子部品, 半導体
IRG7PH42UPbF/IRG7PH42U-EP
10000
1000
Cies
100 Coes
10
0
Cres
100 200 300 400 500 600
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
16
14
VCES = 600V
VCES = 400V
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Q G, Total Gate Charge (nC)
Fig. 18- Typical Gate Charge vs. VGE
ICE = 30A; L = 600μH
1
D = 0.50
0.1 0.20
0.10
0.05
0.01
0.001
0.0001
1E-006
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
1E-005
0.0001
0.001
R4R4
τCτ
Ri (°C/W)
0.1306
0.1752
τi (sec)
0.000313
0.002056
τ4τ4 0.0814 0.008349
0.0031 0.0431
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
6 www.irf.com

6 Page



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部品番号部品説明メーカ
IRG7PH42U-EP

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier
IRG7PH42U-EP

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier
International Rectifier


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