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PDF IRG7PH35UDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH35UDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-96288
IRG7PH35UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UD-EP
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
G
E
n-channel
C
VCES = 1200V
I NOMINAL = 20A
TJ(max) = 150°C
VCE(on) typ. = 1.9V
C
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
GC E
TO-247AC
IRG7PH35UDPbF
GC E
TO-247AD
IRG7PH35UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE=15V
cILM Clamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
www.DataSheet4U.comMounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
50
25
20
60
80
50
25
80
±30
180
70
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
0.65
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
02/08/10
1 page  
IRG7PH35UDPbF/IRG7PH35UD-EP
8
7
6 ICE = 10A
ICE = 20A
5 ICE = 40A
4
3
2
1
5 10 15
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
4000
20
80
70
60
50
40
TJ = 150°C
30
20
TJ = 25°C
10
0
4 5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V, tp = 30µs
1000
3000
EON
tdOFF
100 tF
2000
tdON
1000
EOFF
10
tR
0
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
3500
1
0 10 20 30 40
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
3000
2500
EON
1000
tdOFF
2000
www.DataSh1e5e0t04U.com
1000
EOFF
500
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
100
tdON
tF
tR
10
0 20 40 60 80 100
RG (Ω)
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
www.irf.com
5
5 Page 
IRG7PH35UDPbF/IRG7PH35UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.DataSheet4U.com
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
11
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