IRG7PH35UD-EP Datasheet PDF - International Rectifier
| Part Number | IRG7PH35UD-EP | |
| Description | INSULATED GATE BIPOLAR TRANSISTOR | |
| Manufacturers | International Rectifier | |
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There is a preview and IRG7PH35UD-EP download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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PD-96288
IRG7PH35UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRG7PH35UD-EP
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tight parameter distribution
• Lead-Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
C
G
E
n-channel
C
VCES = 1200V
I NOMINAL = 20A
TJ(max) = 150°C
VCE(on) typ. = 1.9V
C
Applications
• U.P.S.
• Welding
• Solar Inverter
• Induction Heating
GC E
TO-247AC
IRG7PH35UDPbF
GC E
TO-247AD
IRG7PH35UD-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
Nominal Current
ICM Pulse Collector Current, VGE=15V
cILM Clamped Inductive Load Current, VGE=20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
www.DataSheet4U.comMounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
50
25
20
60
80
50
25
80
±30
180
70
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
0.65
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
02/08/10
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IRG7PH35UDPbF/IRG7PH35UD-EP
8
7
6 ICE = 10A
ICE = 20A
5 ICE = 40A
4
3
2
1
5 10 15
VGE (V)
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
4000
20
80
70
60
50
40
TJ = 150°C
30
20
TJ = 25°C
10
0
4 5 6 7 8 9 10
VGE, Gate-to-Emitter Voltage (V)
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V, tp = 30µs
1000
3000
EON
tdOFF
100 tF
2000
tdON
1000
EOFF
10
tR
0
0 10 20 30 40
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
3500
1
0 10 20 30 40
IC (A)
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
3000
2500
EON
1000
tdOFF
2000
www.DataSh1e5e0t04U.com
1000
EOFF
500
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
100
tdON
tF
tR
10
0 20 40 60 80 100
RG (Ω)
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
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| Information | Total 11 Pages | |
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