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PDF IRG7PH30K10PBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH30K10PBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 µS short Circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature Co-Efficient
• Tight Parameter Distribution
• Lead Free Package
PD - 96156A
IRG7PH30K10PbF
C
G
E
n-channel
VCES = 1200V
IC = 23A, TC = 100°C
tSC ≥ 10µs, TJ(max) =175°C
VCE(on) typ. = 2.05V
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
G
Gate
E
GC
TO-247AC
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current Vge = 15V
cClamped Inductive Load Current Vge = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
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RθJC (IGBT)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
33
23
9.0
27
36
±30
210
110
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
06/23/09
1 page  
1000
tF
IRG7PH30K10PbF
1000
EON
900
100 tdOFF
tR
tdON
10
0
5 10 15 20
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 1000µH; VCE = 600V, RG = 22Ω; VGE = 15V
1000
tF
100
tdOFF
tR
10
tdON
800
700
EOFF
600
0
10 20 30 40 50
RG (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1000µH; VCE = 600V, ICE = 9.0A; VGE = 15V
48 60
40
Tsc
50
32 40
Isc
24 30
16 20
1
0 10 20 30 40 50
RG (Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 1000µH; VCE = 600V, ICE = 9.0A; VGE = 15V
10000
1000
Cies
100
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10
Coes
Cres
1
0 100 200 300 400 500
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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8
8
16
14
12
10 12 14
VGE (V)
10
16
Fig. 16 - VGE vs. Short Circuit Time
VCC = 600V; TC = 150°C
VCES = 600V
VCES = 400V
10
8
6
4
2
0
0 10 20 30 40 50
Q G, Total Gate Charge (nC)
Fig. 18- Typical Gate Charge vs. VGE
ICE = 9.0A; L = 1.0mH
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRG7PH30K10PBF.PDF ] | |
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