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PDF IRG7PH30K10DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG7PH30K10DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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PD - 97403
IRG7PH30K10DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
C
• 10 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
G
E
n-channel
VCES = 1200V
IC = 16A, TC = 100°C
tSC ≥ 10µs, TJ(max) = 150°C
VCE(on) typ. = 2.05V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
C
E
GC
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
INOMINAL
Nominal Current
ICM Pulse Collector Current, Vge = 15V
cILM Clamped Inductive Load Current, Vge = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
dDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
www.DataSheet4U.coSmoldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
30
16
9.0
27
36
30
16
36
±30
180
71
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.44
–––
–––
Units
°C/W
www.irf.com
08/14/09
1 page  
2000
1600
1200
800
400
EON
EOFF
IRG7PH30K10DPbF
1000
tF
100 tdOFF
tR
10 tdON
0
5 10 15 20
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V
1600
1400
1200
EON
1000
800
600 EOFF
1
0 5 10 15 20
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 600V, RG = 22Ω; VGE = 15V
1000
tF
100
tdOFF
tR
10
tdON
400
0
20 40 60 80 100
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V
18
16 RG = 5.0Ω
1
0 20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1.0mH; VCE = 600V, ICE = 9.0A; VGE = 15V
18
16
14 RG = 10Ω
12
RG = 20Ω
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8 RG = 47Ω
14
12
10
6
4 6 8 10 12 14 16 18
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 150°C
20
www.irf.com
8
0 10 20 30 40
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
50
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG7PH30K10DPBF.PDF ] | |
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