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IXA12IF1200TC PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXA12IF1200TC
部品説明 XPT IGBT
メーカ IXYS
ロゴ IXYS ロゴ 



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IXA12IF1200TC Datasheet, IXA12IF1200TC PDF,ピン配置, 機能
XPT IGBT
Copack
IXA12IF1200TC
preliminary
I C25 =
VCES
=
V =CE(sat)typ
20 A
1200 V
1.8 V
Part number
IXA12IF1200TC
C (2)
(G) 1
Features / Advantages:
Easy paralleling due to the positive temperature
coefficient of the on-state voltage
Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (3)
Applications:
AC motor drives
Solar inverter
Medical equipment
Uninterruptible power supply
Air-conditioning systems
Welding equipment
Switched-mode and resonant-mode
power supplies
Inductive heating, cookers
Package:
Housing: TO-268AA (D3Pak)
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
IGBT
Symbol
VCES
VGES
IC25
I C90
Ptot
I CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I GES
VCE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
VGE(th)
Q Gon
t d(on)
tr
t d(off)
tf
Eon
Eoff
RBSOA
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
www.DSaCtaSSOheAet4US.choomrt circuit safe operation area
tSC Short circuit duration
I SC
RthJC
Short circuit current
Thermal resistance juntion to case
Conditions
VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TC = 25°C
TC = 90°C
VCE = VCES ; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
TVJ = 125 °C
VCE = 0 V; VGE = ±20 V
IC = 9 A; VGE = 15 V
IC = 0.3 mA; VGE = VCE
TVJ = 25°C
TVJ = 125 °C
VCE = 600 V; VGE = 15 V; IC = 10 A
Inductive load
VCE = 600 V; IC = 10 A
VGE = ±15 V; RG= 100 Ω
VGE = 15 V; RG = 100 Ω
VCEK = 1200 V
TVJ = 125 °C
TVJ = 125°C
Ratings
min. typ. max.
1200
±20
20
13
85
0.1
0.1
500
1.8 2.1
2.1
5.5 6 6.5
27
70
40
250
100
1.1
1.1
30
Unit
V
V
A
A
W
mA
mA
nA
V
V
V
nC
ns
ns
ns
ns
mJ
mJ
A
VCE = 900 V; VGE= ±15 V
RG = 100 Ω ; non-repetitive
TVJ = 125°C
10 µs
40 A
1.5 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20090409

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