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PDF IRF630A Data sheet ( Hoja de datos )
| Número de pieza | IRF630A | |
| Descripción | N-Channel MOSFET Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF630A
DESCRIPTION
·Drain Current –ID=9A@ TC=25℃
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·Fast Switching Speed
·Low Drive Requirement
APPLICATIONS
·This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies,UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.iscsemSYMBOL ARAMETER
VALUE UNIT
VDSS
wwwVGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
200
±30
V
V
ID Drain Current-continuous@ TC=25℃ 9 A
Ptot Total Dissipation@TC=25℃
72 W
Tj Max. Operating Junction Temperature 150
℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
www.DataRShtheje-at4U.coTmhermal Resistance,Junction to Ambient
1.74
62.5
℃/W
℃/W
isc Website：www.iscsemi.cn
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF630A.PDF ] | |
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