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PDF CMPDM302PH Data sheet ( Hoja de datos )
| Número de pieza | CMPDM302PH | |
| Descripción | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CMPDM302PH
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-23F CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM302PH
is a High Current P-Channel Enhancement-mode
Silicon MOSFET, manufactured by the P-Channel
DMOS Process, and is designed for high speed pulsed
amplifier and driver applications. This MOSFET offers
High Current, Low rDS(ON), Low Threshold Voltage,
and Low Leakage Current.
MARKING CODE: 302C
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Low rDS(ON) (0.129Ω MAX @ VGS=2.5V)
• High current (ID=2.4A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
TJ, Tstg
ΘJA
30
12
2.4
9.6
350
-55 to +150
357
UNITS
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR VGS=12V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
30
VGS(th)
VGS=VDS, ID=250μA
0.7
rDS(ON)
VGS=4.5V, ID=1.2A
0.061
rDS(ON)
VGS=2.5V, ID=1.2A
0.086
gFS VDS=5.0V, ID=2.4A
13.2
Crss
VDS=10V, VGS=0, f=1.0MHz
46
Ciss VDS=10V, VGS=0, f=1.0MHz
398
Coss
VDS=10V, VGS=0, f=1.0MHz
82
Qg(tot)
VDD=10V, VGS=5.0V, ID=2.4A
6.4
Qgs VDD=10V, VGS=5.0V, ID=2.4A
2.8
Qgd VDD=10V, VGS=5.0V, ID=2.4A
1.7
ton VDD=10V, ID=2.4A, RG=10Ω
16.3
toff VDD=10V, ID=2.4A, RG=10Ω
12.9
MAX
100
UNITS
nA
1.0 μA
V
1.4 V
0.091
Ω
0.129
Ω
S
pF
pF
pF
9.6 nC
4.2 nC
2.6 nC
ns
ns
R0 (21-October 2010)
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