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PDF ISL9N315AD3 Data sheet ( Hoja de datos )
| Número de pieza | ISL9N315AD3 | |
| Descripción | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
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February 2003
ISL9N315AD3 / ISL9N315AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Formerly developmental type 83337
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.012Ω (Typ), VGS = 10V
• rDS(ON) = 0.022Ω (Typ), VGS = 4.5V
• Qg (Typ) = 18nC, VGS = 5V
• Qgd (Typ) = 3.4nC
• CISS (Typ) = 900pF
DRAIN (FLANGE)
GATE
SOURCE
TO-252
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-251
D
G
S
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA= 52oC/W)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
30
23
10
Figure 4
55
0.37
-55 to 175
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-251, TO-252
RθJA
RθJA
Thermal Resistance Junction to Ambient TO-251, TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
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Package Marking and Ordering Information
Device Marking
N315AD
N315AD
Device
ISL9N315AD3ST
ISL9N315AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
2.73
100
52
Tape Width
16mm
N/A
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
2500 units
75 units
©2003 Fairchild Semiconductor Corporation
ISL9N315AD3/ISL9N315AD3ST Rev. A1
1 page  
Typical Characteristic (Continued)
2000
1000
COSS ≅ CGS + CGD
CISS = CGS + CGD
10
VDD = 15V
8
6
CRSS = CGD
100
70
0.1
VGS = 0V, f = 1MHz
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 11. Capacitance vs Drain to Source
Voltage
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 30A
ID = 15A
3 6 9 12
Qg, GATE CHARGE (nC)
15
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
100
VGS = 4.5V, VDD = 15V, ID = 9A
80
60
40
tr
tf
td(OFF)
20
td(ON)
0
0
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 13. Switching Time vs Gate Resistance
Test Circuits and Waveforms
140
VGS = 10V, VDD = 15V, ID = 9A
120
100
td(OFF)
80
60
40
20
0
0
tf
td(ON)
tr
10 20 30 40
RGS, GATE TO SOURCE RESISTANCE (Ω)
50
Figure 14. Switching Time vs Gate Resistance
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
www.DataSheet4U.com tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 15. Unclamped Energy Test Circuit
©2003 Fairchild Semiconductor Corporation
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 16. Unclamped Energy Waveforms
ISL9N315AD3/ISL9N315AD3ST Rev.A1
5 Page 
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ActiveArray™
Bottomless™
FACT Quiet Series™
FAST®
CoolFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
Across the board. Around the world.™
The Power Franchise™
Programmable Active Droop™
ImpliedDisconnect™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic®
TruTranslation™
UHC™
UltraFET®
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
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Full Production
Not In Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
11 Page | ||
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