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PDF IRFP4368PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4368PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97322
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
G
IRFP4368PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
S ID (Package Limited)
75V
1.46mΩ
1.85mΩ
350Ac
195A
D
S
D
G
TO-247AC
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dv/dt
TJ
TSTG
Peak Diode Recovery f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
wwEwAS.D(ThaetramSahllyeliemtit4edU) .comSingle Pulse Avalanche Energy e
IAR Avalanche Current d
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
Junction-to-Case k
RθCS
RθJA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
G
Gate
D
Drain
Max.
350c
250c
195
1280
520
3.4
± 20
13
-55 to + 175
300
10lbxin (1.1Nxm)
430
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.29
–––
40
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
06/02/08
1 page  
IRFP4368PbF
1
D = 0.50
0.1
0.20
0.10
0.01
0.05
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3
τ3 τ3
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.0145
0.0661
τi (sec)
0.000024
0.000148
τ4τ4 0.1257 0.002766
0.0838 0.017517
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
0.01
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τj = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
500
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
400 ID = 195A
300
200
www.DataSheet4U.com
100
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFP4368PBF.PDF ] | |
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