|
|
PDF TC2896 Data sheet ( Hoja de datos )
| Número de pieza | TC2896 | |
| Descripción | 5 W Flange Ceramic Packaged GaAs Power FETs | |
| Fabricantes | TRANSCOM | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TC2896 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
5 W Flange Ceramic Packaged GaAs Power FETs
TC2896
REV4_20070507
FEATURES
• 5 W Typical Power at 6 GHz
• 8 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 Ghz
• High Power Added Efficiency:
Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC and RF Tested
• Flange Ceramic Package
PHOTO ENLARGEMENT
DESCRIPTION
The TC2896 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.
The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC
and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for
commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS
Symbol
CONDITIONS
MIN TYP MAX UNIT
P1dB Output Power at 1dB Gain Compression Point, f = 6 GHz VDS = 8 V, IDS = 1200 mA
GL Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA
IP3 Intercept Point of the 3rd-order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm
PAE Power Added Efficiency at 1dB Compression Power, f = 6 GHz
36
36.5
8
47
40
dBm
dB
dBm
%
IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
gm Transconductance at VDS = 2 V, VGS = 0 V
VP Pinch-off Voltage at VDS = 2 V, ID = 24 mA
BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA
Rth Thermal Resistance
3
2000
-1.7**
18 22
2.7
A
mS
Volts
Volts
°C/W
* PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2896 into 3 model numbers to fit customer design requirement
(1)TC2896P1519 : Vp = -1.5V to -1.9V (2)TC2896P1620 : Vp = -1.6V to -2.0V (3)TC2896P1721 : Vp = -1.7V to -2.1V
www.DIfatraeqSuhieredt4, Ucu.sctoomer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan,
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TC2896.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TC2896 | 5 W Flange Ceramic Packaged GaAs Power FETs | TRANSCOM |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |