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PDF TSB1184 Data sheet ( Hoja de datos )
| Número de pieza | TSB1184 | |
| Descripción | Low Vce(sat) PNP Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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TSB1184
Low Vce(sat) PNP Transistor
Pin Assignment:
1. Base
2. Collector
3. Emitter
BVCEO = - 50V
Ic = - 3A
VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A
Features
Ordering Information
Low VCE (SAT).
Excellent DC current gain characteristics
Structure
Part No.
TSB1184CP
Packing
Tape & Reel
Epitaxial planar type.
PNP silicon transistor
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Package
TO-252
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
TO-252
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 2mS
Electrical Characteristics
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Ta = 25 oC unless otherwise noted
Parameter
Conditions
Static
Collector-Base Voltage
IC = - 50uA, IE = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
IC = - 1mA, IB = 0
IE = - 50uA, IC = 0
VCB = - 40V, IE = 0
VEB = - 4V, IC = 0
IC / IB = - 2.0A / - 0.2A
VCE = - 2V, IC = - 1A
VCE = - 5V, IC = - 100mA,
f = 100MHz
Output Capacitance
VCB = - 10V, f=1MHz
Note : pulse test: pulse width <=380uS, duty cycle <=2%
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Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
hFE
fT
Cob
Limit
- 50V
- 50V
-6
-3
- 7 (note 1)
1.0
+150
- 55 to +150
Min Typ
- 50 --
- 50 --
- 6 --
-- --
-- --
-- - 0.3
120 --
-- 80
55
Unit
V
V
V
A
W
oC
oC
Max Unit
--
--
--
-1
-1
- 0.5
560
--
V
V
V
uA
uA
V
MHz
-- pF
Classification Of hFE
Rank
Q
Range
120 - 270
R
180 - 390
S
270 - 560
TSB1184
1-1 2003/12 rev. B
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet TSB1184.PDF ] | |
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