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HY5S5B6GLF-S の電気的特性と機能

HY5S5B6GLF-SのメーカーはHynix Semiconductorです、この部品の機能は「256Mbit (16Mx16bit) Mobile SDR Memory」です。


製品の詳細 ( Datasheet PDF )

部品番号 HY5S5B6GLF-S
部品説明 256Mbit (16Mx16bit) Mobile SDR Memory
メーカ Hynix Semiconductor
ロゴ Hynix Semiconductor ロゴ 




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HY5S5B6GLF-S Datasheet, HY5S5B6GLF-S PDF,ピン配置, 機能
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of
256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Apr. 2006
1

1 Page





HY5S5B6GLF-S pdf, ピン配列
11
256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
DESCRIPTION
The Hynix HY5S5B6GLF(P) is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular
phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.
The Hynix 256M Mobile SDRAM is 268,435,456-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the
main memory applications which requires large memory density and high bandwidth. It is organized as 4banks of
4,194,304x16.
Mobile SDRAM is a type of DRAM which operates in synchronization with input clock. The Hynix Mobile SDRAM latch
each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the
input clock (CLK). The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16 Input/
Output bus. All the commands are latched in synchronization with the rising edge of CLK.
The Mobile SDRAMs provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8
locations or full page. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is ini-
tiated at the end of the burst access. The Mobile SDRAM uses an internal pipelined architecture to achieve high-speed
operation. This architecture is compartible with the 2n rule of prefetch architectures, but it also allows the column
address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while
accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, randon-
access operation.
Read and write accesses to the Hynix Mobile SDRAMs are burst oriented;
accesses start at a selected location and continue for a programmed number of locations in a programmed sequence.
Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command.
The address bits registered coincident with the ACTIVE command are used to select the bank and the row to be
accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and
the starting column location for the burst access. A burst of Read or Write cycles in progress can be terminated by a
burst terminate command or can be interrupted and replaced by a new burst Read or Write command on any
cycle(This pipelined design is not restricted by a 2N rule).
The Hynix Mobile SDR also provides for special programmable options including Partial Array Self Refresh of full array,
half array, quarter array Temperature Compensated Self Refresh of 40 or 85 degrees oC.
The Hynix Mobile SDR has the special Low Power function of Auto TCSR(Temperature Compensated Self Refresh) to
reduce self refresh current consumption. Since an internal temperature sensor is implanted, it enables to automatically
adjust refresh rate according to temperature without external EMRS command.
Deep Power Down Mode is a additional operating mode for Mobile SDR. This mode can achieve maximum power
reduction by removing power to the memory array within each Mobile SDR. By using this feature, the system can cut
off alomost all DRAM power without adding the cost of a power switch and giving up mother-board power-line layout
flexibility.
All inputs are LV-CMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).
Rev 1.0 / Apr. 2006
3


3Pages


HY5S5B6GLF-S 電子部品, 半導体
11
256Mbit (16Mx16bit) Mobile SDR Memory
HY5S5B6GLF(P)-xE Series
BALL DESCRIPTION
12 34
678 9
A VSS DQ15 VSSQ
B DQ14 DQ13 VDDQ
VDDQ DQ0 VDD
VSSQ DQ2 DQ1
C DQ12 DQ11 VSSQ
VDDQ DQ4 DQ3
D DQ10 DQ9 VDDQ
VSSQ DQ6 DQ5
TOPE DQ8 NC VSS
VDD LDQM DQ7
VIEW
F UDQM CLK
CKE
/CAS /RAS /WE
G A12 A11
A9
BA0 BA1 /CS
H A8 A7 A6
J
VSS A5
A4
A0 A1 A10
A3 A2 VDD
Top view
Rev 1.0 / Apr. 2006
6

6 Page



ページ 合計 : 30 ページ
 
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共有リンク

Link :


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