Datasheet PJ04N03D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	PJ04N03D	25V N-Channel Enhancement Mode Field Effect Transistor PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor FEATURES • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),[email protected],I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Driver	Pan Jit International	transistor

PJ0 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	PJ015BL	N-Channel Enhancement Mode MOSFET PJ015BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 1Ω @VGS = 10V ID 0.8A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Curr	UNIKC	mosfet
2	PJ04N03D	25V N-Channel Enhancement Mode Field Effect Transistor PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor FEATURES • RDS(ON),VGS@10V,I DS@30A=4mΩ • RDS(ON),[email protected],I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Driver	Pan Jit International	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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