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50N10 の電気的特性と機能

50N10のメーカーはIXYS Corporationです、この部品の機能は「 IXFK150N10」です。


製品の詳細 ( Datasheet PDF )

部品番号 50N10
部品説明 IXFK150N10
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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50N10 Datasheet, 50N10 PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK100N10
IXFN150N10
V
DSS
I
D25
100 V 100 A
100 V 150 A
trr £ 200 ns
R
DS(on)
12 mW
12 mW
TO-264 AA (IXFK)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID120
I
DM
I
AR
EAR
dv/dt
PD
T
J
T
JM
Tstg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 120°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
100
100
±20
±30
100 
76
560
75
30
5
100
100
±20
±30
150
-
560
75
30
5
V
V
V
V
A
A
A
A
mJ
V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Symbol
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V
DSS
VGH(th)
V = 0 V, I = 1 mA
GS D
VDS = VGS, ID = 8 mA
IGSS VGS = ±20 VDC, VDS = 0
IDSS VDS = 0.8 • VDSS
TJ = 25°C
V =0V
www.DataSheet4U.comGS
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 75 A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
100
2
V
4V
±200 nA
400 mA
2 mA
12 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
q International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94 V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92803G(8/96)
1-4

1 Page





50N10 pdf, ピン配列
Fig. 1 Output Characteristics
400
TJ = 25°C
350
300
VGS = 10V
9V
250
8V
200
150
7V
100
50 6V
5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25°C
1.3
1.2
VGS = 10V
1.1
1.0
VGS = 15V
0.9
0.8
0
40 80 120 160 200 240 280 320
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
175
150N10
150
125
100
100N10
75
50
25
0
-50 -25
www.DataSheet4U.com
0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXFK 100N10
IXFN 150N10
Fig. 2 Input Admittance
300
250
200
150
100
TJ = 125°C
50 TJ = 125°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.00
1.75
1.50
1.25
ID = 75A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
BVDSS
1.1
1.0
0.9
0.8
VGS(th)
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
3-4


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共有リンク

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部品番号部品説明メーカ
50N10

IXFK150N10

IXYS Corporation
IXYS Corporation


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