DataSheet.jp

EIA7785-6 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIA7785-6
部品説明 7.70-8.50GHz 6-Watt Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



Total 1 pages
		

No Preview Available !

EIA7785-6 Datasheet, EIA7785-6 PDF,ピン配置, 機能
UPDATED 11/30/2005
EIA7785-6
7.70-8.50 GHz 6-Watt Internally Matched Power FET
FEATURES
7.70– 8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+38.5 dBm Output Power at 1dB Compression
10 dB Power Gain at 1dB Compression
36% Power Added Efficiency
Hermetic Metal Flange Package
.827±.010 .669
Excelics
EIA7785-6
.120 MIN YYWW
SN
.024
.421
.120 MIN
.168±.010
.125
.508±.008
.442
ALL DIMENSIONS IN INCHES
.004
.063
.004
.105±.008
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 7.70-8.50GHz
VDS = 8 V, IDSQ 2000mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 8 V, IDSQ 2000mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 8 V, IDSQ 2000mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ 2000mA
f = 7.70-8.50GHz
Id1dB
Drain Current at 1dB Compression
f = 7.70-8.50GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 39mA
RTH Thermal Resistance3
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN TYP MAX UNITS
37.5 38.5
dBm
9 10
dB
±0.6 dB
36 %
2200
2500
mA
3900
4800
mA
-1.0 -2.5
V
4.0 4.5 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Ids Drain Current
Igsf Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch Channel Temperature
Tstg
Storage Temperature
www.DataSheePt4tU.com
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
12
-5
IDSS
61.2mA
-10.2mA
37.5dBm
175 oC
-65 to +175 oC
33W
CONTINUOUS2
8V
-3V
4.1A
20.4mA
-3.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
33W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2005

1 Page





ページ 合計 : 1 ページ
PDF
ダウンロード
[ EIA7785-6.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
EIA7785-2

7.70-8.50GHz 2-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor
EIA7785-6

7.70-8.50GHz 6-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap