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EIA5060-1S PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIA5060-1S
部品説明 5.0-6.0GHz 1W Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



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EIA5060-1S Datasheet, EIA5060-1S PDF,ピン配置, 機能
Excelics
TENTATIVE DATA SHEET
5.0-6.0GHz, 1W Internally Matched Power FET
EIA5060-1S
5.0-6.0GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
FEATURES HIGH PAE(35% TYPICAL)
31.0dBm TYPICAL P1dB OUTPUT POWER
13dB TYPICAL G1dB POWER GAIN
NON-HERMETIC 180 MIL METAL FLANGE
PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25
OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=5.0-6.0GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=5.0-6.0GHz
Power Added Efficiency at 1dB compression f=5.0-
6.0GHz
Vds=8V, Idsq=0.5 Idss
EIA0506-1P180F
MIN TYP MAX
29.5 31.0
11 13
35
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point f=5.0-6.0GHz
Vds=8V, Idsq=0.5 Idss
440
37
Idss Saturated Drain Current Vds=3V, Vgs=0V
550 720 850
Gm Transconductance Vds=3V, Vgs=0V
760
Vp
Pinch-off Voltage
Vds=3V, Ids=6mA
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=4.8mA
-13 -15
Rth Thermal Resistance (Au-Sn Eutectic Attach)
16
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
12V 8V
Vgs Gate-Source Voltage
-8V -3V
Ids Drain Current
Idss Idss
Igsf Forward Gate Current
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
90mA
29dBm
175oC
-65/175oC
15mA
@ 3dB Compression
150oC
-65/150oC
www.DataSheet4U.comPt
Total Power Dissipation
8.5W
7.1W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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EIA5060-1S

5.0-6.0GHz 1W Internally Matched Power FET

Excelics Semiconductor
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