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EIA1616-8P-2 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIA1616-8P-2
部品説明 16.2-16.4GHz 8-Watt Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



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EIA1616-8P-2 Datasheet, EIA1616-8P-2 PDF,ピン配置, 機能
UPDATED 11/09/06
EIA1616-8P-2
16.2-16.4GHz 8-Watt Internally Matched Power FET
FEATURES
16.2– 16.4GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.0 dBm Output Power at 1dB Compression
6.0 dB Min. Power Gain at 1dB Compression
30% Power Added Efficiency
Non-Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
EIA1616-8P-2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 16.2-16.4GHz
VDS = 8 V, IDSQ 2200mA
Gain at 1dB Compression
f = 16.2-16.4GHz
VDS = 8 V, IDSQ 2200mA
Gain Flatness
f = 16.2-16.4GHz
VDS = 8 V, IDSQ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ 2200mA
f = 16.2-16.4GHz
Id1dB
Drain Current at 1dB Compression
f = 16.2-16.4GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 40 mA
Note:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
38.0
6.0
TYP
39.0
7.0
30
2600
4000
-1.0
3.5
MAX
±0.6
3200
6000
-2.5
4.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds
Drain-Source Voltage
10V
8V
Vgs
Gate-Source Voltage
-5V
-3V
Igf Forward Gate Current 86.4mA
28.8mA
Igr Reverse Gate Current -14.4mA
-4.8mA
Pin
Input Power
38 dBm
@ 3dB Compression
Tch Channel Temperature
175 oC
175 oC
Tstg
www.DataSheet4U.com
Pt
Storage Temperature
Total Power Dissipation
-65 to +175 oC
38W
-65 to +175 oC
38W
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package,
and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006

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EIA1616-8P-2

16.2-16.4GHz 8-Watt Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

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