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EIA1616-4P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIA1616-4P
部品説明 16.2-16.4GHz 4W Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 

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EIA1616-4P Datasheet, EIA1616-4P PDF,ピン配置, 機能
Excelics
PRELIMINARY DATA SHEET
16.2-16.4GHz, 4W Internally Matched Power FET
EIA1616-4P
16.2-16.4GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
HIGH PAE( 25% TYPICAL)
+36dBm TYPICAL P1dB OUTPUT POWER
7dB TYPICAL G1dB POWER GAIN
NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=16.2-16.4GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=16.2-16.4GHz
Power Added Efficiency at 1dB compression
f=16.2-16.4GHz Vds=8V, Idsq=0.5 Idss
EIA1616-4P
MIN TYP MAX
35 36
67
25
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point
Vds=8V, Idsq=0.5 Idss
f=16.2-16.4GHz
1760
Idss Saturated Drain Current Vds=3V, Vgs=0V
2200 2880 3400
Gm Transconductance Vds=3V, Vgs=0V
3000
Vp Pinch-off Voltage Vds=3V, Ids=48mA
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=19.2mA
-13 -15
Rth Thermal Resistance (Au-Sn Eutectic Attach)
4.5
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
360mA
Pin
www.DataSheet4U.comTch
Tstg
Input Power
Channel Temperature
Storage Temperature
35dBm
175oC
-65/175oC
Pt Total Power Dissipation
30W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
3120mA
60mA
@ 3dB Compression
150oC
-65/150oC
25W
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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部品番号部品説明メーカ
EIA1616-4P

16.2-16.4GHz 4W Internally Matched Power FET

Excelics Semiconductor
Excelics Semiconductor

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