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EIA1114-4 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 EIA1114-4
部品説明 11.0-14.0 GHz 4-Watt Internally Matched Power FET
メーカ Excelics Semiconductor
ロゴ Excelics Semiconductor ロゴ 



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EIA1114-4 Datasheet, EIA1114-4 PDF,ピン配置, 機能
UPDATED 07/25/2006
EIA1114-4
11.0-14.0GHz 4-Watt Internally Matched Power FET
FEATURES
11.0– 14.0GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-36 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA1114-4
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Gain at 1dB Compression
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Gain Flatness
f = 11.0-14.0GHz
VDS = 8 V, IDSQ 1500mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ 1500mA
f = 11.0-14.0GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 11.0-14.0GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 8 V, IDSQ 65% IDSS
f = 14.0GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 29 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
35.5
6.0
TYP
36.5
7.0
25
1700
MAX
±0.8
2000
UNITS
dBm
dB
dB
%
mA
-36 dBc
2880
3600
mA
-1.0 -2.5
V
5.5 6.0 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reverse Gate Current
Pin Input Power
www.DataSheeTtc4Uh .com
Channel Temperature
Tstg
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
10
-5
43.2mA
-7.2mA
35.5dBm
175 oC
-65 to +175 oC
25W
CONTINUOUS2
8V
-3V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised July 2006

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