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EIA1111-2のメーカーはExcelics Semiconductorです、この部品の機能は「11.0-11.5 GHz 2-Watt Internally Matched Power FET」です。 |
部品番号 | EIA1111-2 |
| |
部品説明 | 11.0-11.5 GHz 2-Watt Internally Matched Power FET | ||
メーカ | Excelics Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとEIA1111-2ダウンロード(pdfファイル)リンクがあります。 Total 1 pages
UPDATED 02/17/2006
EIA1111-2
11.0-11.5 GHz 2-Watt Internally Matched Power FET
FEATURES
• 11.0– 11.5GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +34.0 dBm Output Power at 1dB Compression
• 11.0 dB Power Gain at 1dB Compression
• 32% Power Added Efficiency
• Hermetic Metal Flange Package
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA1111-2
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.04
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Gain at 1dB Compression
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Gain Flatness
f = 11.0-11.5GHz
VDS = 8 V, IDSQ ≈ 800mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 800mA
f = 11.0-11.5GHz
Id1dB
Drain Current at 1dB Compression
f = 11.0-11.5GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 14 mA
RTH Thermal Resistance3
Note: 1) Tested with 100 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN TYP MAX UNITS
33.0 34.0
dBm
10.0 11.0
dB
±0.6 dB
32 %
900 1100 mA
1400
1800
mA
-1.0 -2.5
V
10 11 oC/W
3) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
Vds
Drain-Source Voltage
Vgs
Gate-Source Voltage
Igsf Forward Gate Current
Igsr
Reserve Gate Current
Pin Input Power
Tch Channel Temperature
www.DataSheTets4tUg.com
Storage Temperature
Pt Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
ABSOLUTE1
12
-5
21.6mA
-3.6mA
32.5dBm
175 oC
-65 to +175 oC
13W
CONTINUOUS2
8V
-3V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
13W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised February 2006
1 Page | |||
ページ | 合計 : 1 ページ | ||
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PDF ダウンロード | [ EIA1111-2 データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
EIA1111-2 | 11.0-11.5 GHz 2-Watt Internally Matched Power FET | Excelics Semiconductor |
EIA1111-6 | 11.0-11.5 GHz 6-Watt Internally Matched Power FET | Excelics Semiconductor |