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PDF IS62C51216AL Data sheet ( Hoja de datos )
| Número de pieza | IS62C51216AL | |
| Descripción | ULTRA LOW POWER CMOS STATIC RAM | |
| Fabricantes | Integrated Silicon Solution | |
| Logotipo |  |
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IS62C51216AL
IS65C51216AL
512K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
www.DataSheet4U.com
APRIL 2009
FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
– 36 mW (typical) operating
– 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
– 4.5V--5.5V Vdd
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature (-40oC to +125oC)
• Lead-free available
DESCRIPTION
The ISSI IS62C51216AL and IS65C51216AL are high-
speed, 8M bit static RAMs organized as 512K words by 16
bits. It is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CS1 is HIGH (deselected) or when CS2 is low
(deselected) or when CS1 is low, CS2 is high and both
LB and UB are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs.The active LOWWrite Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62C51216AL and IS65C51216AL are packaged in
the JEDEC standard 48-pin mini BGA (9mm x 11mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A18
DECODER
512K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
03/18/09
1
1 page  
IS62C51216AL, IS65C51216AL
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
AC TEST LOADS
481 Ω
5V
OUTPUT
30 pF
Including
jig and
scope
Figure 1
255 Ω
Unit
0V to 3.0V
5 ns
1.5V
See Figures 1 and 2
481 Ω
5V
OUTPUT
5 pF
Including
jig and
scope
Figure 2
255 Ω
www.DataSheet4U.com
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
03/18/09
5
5 Page 
IS62C51216AL, IS65C51216AL
WRITE CYCLE NO. 4 (UB/LB Controlled)
ADDRESS
t WC
ADDRESS 1
OE
CS1
CS2
LOW
HIGH
t SA
WE
UB, LB
DOUT
DIN
t PBW
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t WC
ADDRESS 2
www.DataSheet4U.com
t HA
t SA
t PBW
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
UB_CSWR4.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
03/18/09
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IS62C51216AL.PDF ] | |
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