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PDF SIM150D12SV3 Data sheet ( Hoja de datos )
| Número de pieza | SIM150D12SV3 | |
| Descripción | IGBT Module | |
| Fabricantes | SemiWell Semiconductor | |
| Logotipo |  |
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Preliminary
SIM150D12SV3
“HALF-BRIDGE” IGBT Module
Features
Applications
▪ Update NPT Technology design
▪ SMPS & Electrolysis Machine
▪ 10µs Short circuit capability
▪ High Power Inverters
▪ Low turn-off loss
▪ High Frequency inverter-type
▪ Short tail current for over 18KHz
Welding machines
▪ Positive VCE(on)
▪ Servo Controls
PKG V3 62 mm
temperature coefficient
▪ UPS, EPS or Robotics
Absolute Maximum Ratings @ Tj=25 (per leg)
VCES = 1200V
Ic = 150A
VCE(ON) typ. = 2.7V
@ Ic = 150A
Symbol
Parameter
Condition
Ratings
Unit
VCES
Collector-to-Emitter Voltage
VGES
Gate emitter voltage
IC Continuous Collector Current
ICM Pulsed collector current
IF Diode Continuous Forward Current
IFM Diode Maximum Forward Current
TSC Short Circuit Withstand Time
Viso Isolation Voltage test
Tj Junction Temperature
Tstg Storage Temperature
Weight Weight of Module
Mounting Power Terminal Screw : M5
Torque Terminal connection Screw : M5
VGE = 0V, IC = 1.0mA
TC = 80
TC = 80
TC = 80
AC 1 minute
1200
20
150
300
150
300
10
2500
-40 ~ 150
-40 ~ 125
360
3.5
3.5
V
V
A
A
A
A
µs
V
g
Nm
Nm
Electrical Characteristics @ Tj = 25 (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200
-
-
VGE = 0V, IC = 1.0mA
VCE(ON)
Collector-to-Emitter Saturation Voltage
-
2.7 3.1
V IC = 150A, VGE = 15V
VGE(th)
Gate Threshold Voltage
5.0 6.0
VCE = VGE, IC = 500µA
ICES Zero Gate Voltage Collector Current
- - 1.0 mA VGE = 0V, VCE = 1200V
IGES Gate-to-Emitter Leakage Current
-
-
± 200
nA VCE = 0V, VGE = ± 20V
VFM Diode Forward Voltage Drop
- 2.1 2.4 V IC = 150A
www.semiwell.com
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Preliminary
SIM150D12SV3
Fig 9. Typ. Capacitance vs. VCE
VGE = 0V; f = 1Mhz
Fig 10. Typical Gate Charge vs. VGE
ICE = 120A; L = 600µH
Fig 11. Typ. Switching Time vs. IC
TJ = 125 ; L = 200µH; VCE = 600V
RG = 4.7Ω; VGE = 15V
Fig 12. Typ. Switching Time vs. RG
TJ = 125 ; L = 200µH; VCE = 600V
ICE = 150A; VGE = 15V
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SIM150D12SV3.PDF ] | |
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